Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS Devices

Author

Erokhin, Yuri ; Liu, Jinning

Author_Institution

Varian Semicond. Equip. Associates, Gloucester, MA

fYear

0

fDate

0-0 0

Firstpage

21

Lastpage

24

Abstract

Sub-65 nm devices are becoming increasingly sensitive to variations of ion beam angular properties. Beam divergence and beam steering effects in source/drain extension (SDE) implants could significantly shift device characteristics. In this paper we review the implant precision requirements for source/drain extension (SDE) formation for sub-65 nm node devices. TCAD simulation was used to analyze the effects of beam emittance and steering errors for an on-axis (0deg) SDE implant. In addition, the effect of energy contamination introduced along with decelerated low energy ions is also discussed. Response of device electrical characteristics to variation of beam angle properties is quantified and beam angle control requirements for state-of-the-art ultra-low energy implanters are formulated

Keywords

CMOS integrated circuits; electrical conductivity; ion implantation; semiconductor device models; semiconductor junctions; 65 nm; SDE junction formation; TCAD simulation; beam divergence; beam emittance; beam steering effects; device electrical characteristics; energy contamination effect; implant precision requirements; ion beam angular properties; source-drain extension implants; steering errors; sub-65 nm CMOS devices; ultra-low energy implanters; Beam steering; Contamination; Electric variables; Gaussian distribution; Implants; Ion beams; MOS devices; Propagation losses; Semiconductor device modeling; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220852

Filename

1669439