Title :
High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>
Author :
Tanjyo, Masayasu ; Sakai, Shigeki ; Ikejiri, Tadashi ; Tanaka, Kohei ; Koga, Yuji ; Kobayashi, Tomoaki ; Matsumoto, Takao ; Nakaya, Makoto ; Kibi, Yasuhiro ; Yamashita, Takatoshi ; Nagayama, Tsutomu ; Hamamoto, Nariaki ; Umisedo, Sei ; Yuasa, Satoru ; Nai
Author_Institution :
Nissin Ion Equipment Co., Ltd., Kyoto
Abstract :
For the 45 nm beyond advanced LSI mass-production, accurate dose and beam angle control for the implantation process is highly required. For the purpose the ion beam size and angle monitor was developed and installed in EXCEEDS 000AH new version medium current ion implanter.. The measured results shows the beam size and angle increased at the beam energy decreased, especially for the Y direction beam divergence is severe. As the solution, further development items are present
Keywords :
MOSFET; ion beam applications; ion implantation; large scale integration; EXCEEDS 000AH-Nx; MOSFET; angle measurement system; beam energy; beyond 45 nm devices; ion beam size measurement; ion implantation; medium current ion implanter; Electrodes; Fabrication; Ion beams; MOSFET circuits; Particle beams; Production; Size control; Telephony; Tin; Transistors;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220854
