Title :
Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model
Author :
Yu, Min ; Zhang, Xiao ; Ren, Liming ; Huihui Ji ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC~1200degC are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or pre-doping. Analysis on the evolution of B-Si clusters in annealing is performed
Keywords :
Monte Carlo methods; annealing; boron; diffusion; elemental semiconductors; ion implantation; segregation; semiconductor doping; semiconductor process modelling; silicon; 0.5 keV; 900 degC; Si:B; annealing; atomistic model; boron activation; clustering; dopant inactivation; enhanced diffusion; kinetic Monte Carlo method; predoping; shallow junction technology; ultralow energy implantation; Boron; Chaos; Kinetic theory; Laboratories; Microelectronics; Monte Carlo methods; Research and development; Semiconductor process modeling; Simulated annealing; Surface treatment;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220855
