Title :
Characteristics of ultrashallow p+/n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing
Author :
Heo, Sungho ; Oh, Seokjoon ; Hasan, Musarrat ; Cho, H.T. ; Krull, W.A. ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwang-Ju Inst. of Sci. & Technol.
Abstract :
Ultrashallow junction (<10 nm) p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing (ELA) is demonstrated. B18H22 + equivalent implantation energy at 0.25 keV readily forms an amorphous-silicon (a-Si) layer without additional Si+ or Ge+ implantation. After ELA at 500 mJ/cm2, diffusion of the boron profile was almost negligible, which can be explained by selective melting of a-Si
Keywords :
CMOS integrated circuits; Hall effect; amorphous semiconductors; atomic force microscopy; boron compounds; carrier density; doping profiles; elemental semiconductors; ion implantation; laser beam annealing; melting; p-n junctions; secondary ion mass spectra; silicon; transmission electron microscopy; 0.25 keV; Si:B18H22; a-Si; atomic force microscopy; cluster boron ion implantation; diffusion; dopant profile; equivalent implantation energy; excimer laser annealing; high-resolution cross-sectional transmission electron microscopy; melting; n-type silicon substrate; secondary ion mass spectrometry; sub-45 nm CMOS technology node; ultrashallow p+-n junction; Annealing; Atomic force microscopy; Boron; Electrical resistance measurement; Hydrogen; Ion implantation; Laser theory; Materials science and technology; Surface morphology; Throughput;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220858
