Title :
Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation
Author :
Yuan, Li ; Li, Wei ; Yu, Min ; Huihui Ji ; Ren, Liming ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials is applied to model interaction among the atoms in the boron cluster. Simulations of B monomer, B10H14 and B18H22 are performed. The distributions of both B and H in monomer and cluster implantation are verified by SIMS data. It is notable that with the cluster model presented, the simulation can reproduce the difference of monomer and cluster implantation very well
Keywords :
boron; boron compounds; elemental semiconductors; impurity distribution; integrated circuits; ion implantation; molecular dynamics method; secondary ion mass spectra; semiconductor process modelling; silicon; H atoms; SIMS; Si:B; Si:B10H14; Si:B18H22; boron cluster implantation; cluster geometric structure; dopant distribution; integrated circuits; molecular dynamic simulation; monomer implantation; shallow junction formation; Boron; Circuit simulation; Computational modeling; Geometry; Integrated circuit manufacture; Integrated circuit technology; Microelectronics; Research and development; Solid modeling; Space technology;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220860
