Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Author

Yuan, Li ; Li, Wei ; Yu, Min ; Huihui Ji ; Ren, Liming ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

0

fDate

0-0 0

Firstpage

54

Lastpage

57

Abstract

A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials is applied to model interaction among the atoms in the boron cluster. Simulations of B monomer, B10H14 and B₁₈H₂₂ are performed. The distributions of both B and H in monomer and cluster implantation are verified by SIMS data. It is notable that with the cluster model presented, the simulation can reproduce the difference of monomer and cluster implantation very well

Keywords

boron; boron compounds; elemental semiconductors; impurity distribution; integrated circuits; ion implantation; molecular dynamics method; secondary ion mass spectra; semiconductor process modelling; silicon; H atoms; SIMS; Si:B; Si:B₁₀H₁₄; Si:B₁₈H₂₂; boron cluster implantation; cluster geometric structure; dopant distribution; integrated circuits; molecular dynamic simulation; monomer implantation; shallow junction formation; Boron; Circuit simulation; Computational modeling; Geometry; Integrated circuit manufacture; Integrated circuit technology; Microelectronics; Research and development; Solid modeling; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220860

Filename

1669447