Title :
Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices
Author :
Mineji, Akira ; Shishiguchi, Seiichi
Author_Institution :
Div. of Process Technol., NEC Electron. Corp., Kanagawa
Abstract :
In this paper, we report the effects of carbon co-implantation for the reduction of transient enhanced diffusion (TED) of both p-type SD-extension and halo dopants using a conventional spike annealing process. By optimizing implantation conditions, p-type USJ for pMOSFETs and an extremely steep halo profile for nMOSFETs are successfully obtained for the suppression of SCE without drive current degradation
Keywords :
CMOS integrated circuits; MOSFET; annealing; diffusion; ion implantation; semiconductor doping; Ge:B,C; TED; carbon co-implantation; drive current degradation; halo dopants; high performance CMOS devices; implantation conditions; nMOSFET; p-type SD-extension; p-type ultra shallow junction; pMOSFET; short channel effects; spike annealing process; super steep halo formation; transient enhanced diffusion; Annealing; Boron; CMOS process; CMOS technology; Degradation; Electronic mail; Implants; Ion implantation; MOSFETs; National electric code;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220866
