Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

Author

Mineji, Akira ; Shishiguchi, Seiichi

Author_Institution

Div. of Process Technol., NEC Electron. Corp., Kanagawa

fYear

0

fDate

0-0 0

Firstpage

84

Lastpage

87

Abstract

In this paper, we report the effects of carbon co-implantation for the reduction of transient enhanced diffusion (TED) of both p-type SD-extension and halo dopants using a conventional spike annealing process. By optimizing implantation conditions, p-type USJ for pMOSFETs and an extremely steep halo profile for nMOSFETs are successfully obtained for the suppression of SCE without drive current degradation

Keywords

CMOS integrated circuits; MOSFET; annealing; diffusion; ion implantation; semiconductor doping; Ge:B,C; TED; carbon co-implantation; drive current degradation; halo dopants; high performance CMOS devices; implantation conditions; nMOSFET; p-type SD-extension; p-type ultra shallow junction; pMOSFET; short channel effects; spike annealing process; super steep halo formation; transient enhanced diffusion; Annealing; Boron; CMOS process; CMOS technology; Degradation; Electronic mail; Implants; Ion implantation; MOSFETs; National electric code;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220866

Filename

1669453