• DocumentCode
    2387791
  • Title

    Piezoelectric films for MEMS applications

  • Author

    Xu, F. ; Wolf, R.A. ; Yoshimura, T. ; Trolier-McKinstry, S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Penn State Univ., University Park, PA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    386
  • Lastpage
    396
  • Abstract
    Piezoelectric thin films offer an attractive means of sensing and actuation in microelectromechanical systems (MEMS). Relative to other means of generating motion at the microscale, piezoelectricity scales well in terms of energy density as dimensions are reduced. As a result, there is considerable motivation for utilizing such materials in miniaturized motors, switches, valves, etc. Use of ferroelectric thin films in these applications offers the possibility of increasing the sensitivity or actuation capabilities of the devices relative to alternatives such as AlN or ZnO. However, this comes at the cost of the need to integrate more difficult materials, and the introduction of appreciable temperature dependence in the response. This paper describes some of the tradeoffs associated with the use of ferroelectrics in MEMS systems. Available piezoelectric coefficients range from e31,f ∼ -1 to -20 C/m2. Emphasis is placed on the composition, orientation, and grain size dependence of the piezoelectric properties in lead zirconate titanate films.
  • Keywords
    ferroelectric thin films; grain size; lead compounds; micromechanical devices; piezoelectric thin films; MEMS; PZT; PZT films; PbZrO3TiO3; ferroelectric thin films; grain size dependence; microelectromechanical systems; piezoelectric coefficients; piezoelectric properties; piezoelectric thin films; temperature dependence; Costs; Ferroelectric materials; Microelectromechanical systems; Micromechanical devices; Piezoelectric films; Piezoelectricity; Switches; Thin film devices; Valves; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2002. ISE 11. Proceedings. 11th International Symposium on
  • Print_ISBN
    0-7803-7560-2
  • Type

    conf

  • DOI
    10.1109/ISE.2002.1043025
  • Filename
    1043025