Title :
Reflow of AlCu into Vias during CVD TiN barrier deposition
Author :
Oliva, Antonietta ; El-Sayed, Adel ; Griffin, Anthony ; Montgomery, Clint
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A novel Via failure mechanism for a 0.35 μm technology is analyzed in this work. Failure analysis of the failed Vias reveal an anomalous layer at the bottom of the Via hole. Electron diffraction spectra (EDS) of this layer confirms that the main component is AlCu with clusters of titanium aluminide; fluorine is also detected. The root cause of this failure was AlCu extrusion into the Via during the preheat step prior to CVD TiN deposition. It was also found that an improved Ti barrier step coverage can reduce the occurrence of Al extrusions.
Keywords :
aluminium alloys; chemical vapour deposition; copper alloys; electron diffraction; failure analysis; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; titanium compounds; 0.35 μm technology; 0.35 micron; AlCu; CVD barrier deposition; IC interconnections; TiN; Via failure mechanism; anomalous layer; electron diffraction spectra; failure analysis; preheat step; reflow; Artificial intelligence; Collimators; Diffraction; Electrons; Etching; Failure analysis; Instruments; Temperature; Tin; Titanium;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993702
