PLZT based MEMS device

Author

Singh, R. ; Tripathi, A.K. ; Chandra, S. ; Goe, T.C.

Author_Institution

Centre for Appl. Res. in Electron., Indian Inst. of Technol., Delhi, India

fYear

2002

fDate

2002

Firstpage

397

Lastpage

400

Abstract

Pb(Zr,Ti)O₃, PZT thin films and their modified compositions have attracted great attention in recent years for their use in microelectromechanical systems (MEMS). In this paper, lanthanum modified PZT thin films have been deposited on platinised silicon. The parameters, saturation polarization (P_S), remanent polarization (P_R) and coercive field (E_C) of the polarization-electric field hysteresis loop are presented for 0.5 μm thick PLZT thin film of composition (8/60/40). The structural and dielectric properties of the film are also presented. To show the possible integration of the piezoelectric films in MEMS, a simple device has been fabricated using silicon micromachining technology. The resonance frequency of this device was measured as 8.45 MHz and the device was tested for a vibration sensor.

Keywords

diaphragms; dielectric hysteresis; dielectric polarisation; dielectric relaxation; lanthanum compounds; lead compounds; micromachining; micromechanical devices; microsensors; piezoelectric thin films; piezoelectric transducers; sol-gel processing; vibration measurement; 0.5 micron; 8.45 MHz; PLZT based MEMS device; PLZT thin films; PLZT-Pt-Si; PbLaZrO3TiO3-Pt-Si; Si micromachining technology; coercive field; dielectric properties; microelectromechanical systems; piezoelectric films; platinised Si; polarization-electric field hysteresis loop; remanent polarization; resonance frequency; saturation polarization; structural properties; vibration sensor; Dielectric thin films; Lanthanum; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Piezoelectric films; Polarization; Silicon; Transistors; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2002. ISE 11. Proceedings. 11th International Symposium on

Print_ISBN

0-7803-7560-2

Type

conf

DOI

10.1109/ISE.2002.1043026

Filename

1043026