Title :
Status and Outlook of MRAM Memory Technology (Invited)
Author_Institution :
Technol. Solutions Organ., Freescale Semicond., Inc., Chandler, AZ
Abstract :
This paper provide an overview of the recent progress and the nature outlook of MRAM technology. Details of the operation, performance and reliability of Freescale´s commercial 4Mbit MRAM device will be presented. Operation and reliability results demonstrating the extension of toggle MRAM to meet industrial and automotive requirements are presented, and new research results on higher-performance materials and advanced scaling approaches are discussed
Keywords :
magnetic tunnelling; magnetoresistive devices; random-access storage; 4 MByte; magnetic tunnel junction devices; magnetoresistive random access memory; toggle MRAM; CMOS technology; Current density; Magnetic materials; Magnetic moments; Magnetic semiconductors; Magnetic switching; Magnetic tunneling; Surface-mount technology; Switches; Tunneling magnetoresistance;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346850
