DocumentCode
2387836
Title
Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal
Author
Adachi, K. ; Ohuchi, K. ; Aoki, N. ; Tanimoto, H. ; Tsujii, H. ; Eyben, P. ; Vanhaeren, D. ; Vandervorst, W. ; Ishimaru, K. ; Ishiuchi, H.
Author_Institution
SoC Res. & Dev. Center, Toshiba Corp., Yokohama
fYear
0
fDate
0-0 0
Firstpage
104
Lastpage
107
Abstract
We have directly measured two-dimensional (2-D) dopant profiles of millisecond-annealed p-MOSFETs by scanning spreading resistance microscopy (SSRM) for the first time. The measured 2-D dopant profiles agree with simulated dopant profiles obtained by using calibrated TCAD tools. Three-dimensional (3-D) SSRM simulation reveals that the current SSRM probe-contact radius has enough spatial resolution. For further scaling, however, smaller radius of probe is required
Keywords
MOSFET; annealing; doping profiles; semiconductor doping; technology CAD (electronics); annealing; calibrated TCAD tools; p-MOSFET; probe radius; scanning spreading resistance microscopy; spatial resolution; two-dimensional dopant profiles; CMOSFETs; Electrical resistance measurement; Electronic mail; Impurities; MOSFET circuits; Microscopy; Simulated annealing; Threshold voltage; Time measurement; Two dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220871
Filename
1669458
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