Title :
Quantum, Power, and Compound Semiconductor Devices - InP and SiGe-Based High-Speed Devices Towards THz Era
Keywords :
DH-HEMTs; Germanium silicon alloys; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic devices; Pulp manufacturing; Radio frequency; Semiconductor devices; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346852
