• DocumentCode
    2387850
  • Title

    Quantum, Power, and Compound Semiconductor Devices - InP and SiGe-Based High-Speed Devices Towards THz Era

  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    1
  • Keywords
    DH-HEMTs; Germanium silicon alloys; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic devices; Pulp manufacturing; Radio frequency; Semiconductor devices; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346852
  • Filename
    4154271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2387850