DocumentCode
2387873
Title
Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C
Author
Snodgrass, William ; Hafez, Walid ; Harff, Nathan ; Feng, Milton
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT=765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density Jc=18.7 mA/μm2 and BVCEO =1.65 V
Keywords
III-V semiconductors; electron transport theory; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; -55°C; 1.65 V; 12.5 nm; 25°C; 55 nm; 765 GHz; 845 GHz; InP-InGaAs; electron transport; equivalent circuit parameter extraction; parasitic charging delays; pseudomorphic heterojunction bipolar transistors; Current measurement; Cutoff frequency; Delay; Electrons; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Performance gain;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346853
Filename
4154272
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