Recent Advances in InP DHBT Manufacturing Technology

Author

He, Gang ; Le, Minh ; Partyka, Paul ; Hess, Ronald ; Kim, Grant ; Lee, Rainier ; Bryie, Randy ; Sovero, Emilio ; Helix, Max ; Milano, Ray

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A second-generation 0.5 mum InP double heterojunction bipolar transistor (DHBT) technology has been developed with outstanding manufacturability and scalability for advanced RF and mixed-signal integrated-circuit applications. It incorporates self-aligned refractory-metal-based ohmic contacts, ledge passivation for both the EB and BC junctions, and a mature interconnect process. Through process and epi-structure optimization, recent experimental high-speed devices yielded over 400 GHz f_T and 450 GHz f_max, and separately, high-power devices yielded BV_CEO over 20 V with knee voltage under 0.5 V

Keywords

heterojunction bipolar transistors; ohmic contacts; passivation; 0.5 micron; 400 GHz; 450 GHz; InP; double heterojunction bipolar transistor; ledge passivation; mixed-signal integrated-circuit; ohmic contacts; DH-HEMTs; Dielectrics; Etching; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Manufacturing; Plasma applications; Scalability; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346854

Filename

4154273