Title :
ECV Profiling of Ultra-Shallow Junction Formed by Plasma Doping
Author :
Wu, Hui-Zhen ; Ru, Guo-Ping ; Jin, C.G. ; Mizuno, B. ; Jiang, Yu-Long ; Qu, Xin-Ping ; Li, Bing-Zong
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai
Abstract :
Electrochemical capacitance-voltage (ECV) technique has been employed in profiling dopant concentration of ultra-shallow p+n junctions formed by plasma doping. The results show that the junction depth determined by ECV is in good agreement with that determined by secondary ion mass spectroscopy. The results also show that ECV is capable of characterizing pn junctions with junction depth down to 10 nm, and dopant concentration up to 1021 cm-3 with good controllability and repeatability. Its depth resolution can be down to 1 nm
Keywords :
boron; doping profiles; electrochemistry; elemental semiconductors; p-n junctions; plasma materials processing; secondary ion mass spectra; semiconductor doping; silicon; substrates; 10 nm; Si:B; depth resolution; dopant concentration; electrochemical capacitance-voltage technique; plasma doping; secondary ion mass spectroscopy; ultra-shallow junction; ultra-shallow p+ junctions; Annealing; Capacitance-voltage characteristics; Controllability; Electrodes; Etching; Fabrication; Mass spectroscopy; Microelectronics; Plasma applications; Semiconductor device doping;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220875
