Author :
Knoll, D. ; Heinemann, B. ; Ehwald, K.E. ; Fox, A. ; Rücker, H. ; Barth, R. ; Bolze, D. ; Grabolla, T. ; Haak, U. ; Drews, J. ; Kuck, B. ; Marschmeyer, S. ; Richter, H.H. ; Chaimanee, M. ; Fursenko, O. ; Schley, P. ; Tillack, B. ; Köpke, K. ; Yamamoto, Y.
Abstract :
The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C BiCMOS process. This technology offers three npn SiGe:C devices with fT/BVCEO values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz fT/35GHz f max/ 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT and either a 43GHz fT/ 65GHz fmax 4.2V pnp or a 38GHz fT/ 70GHz fmax, 5.8V pnp device can be fabricated additionally (in the npn case) or alternatively (pnp case) to the devices of the 3-mask module
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; radiofrequency integrated circuits; 120 GHz; 150 GHz; 2.1 V; 2.2 V; 3.5 V; 32 GHz; 35 GHz; 38 GHz; 4.2 V; 4.4 V; 40 GHz; 43 GHz; 5 V; 5.8 V; 63 GHz; 65 GHz; 70 GHz; BiCMOS integrated circuit; RF-CMOS process; SiGe:C; heterojunction bipolar transistors; Analog circuits; BiCMOS integrated circuits; CMOS process; Costs; Fabrication; Heterojunction bipolar transistors; Implants; Radio frequency; Silicon germanium; Voltage;
