Title :
Nanoscale Metal Silicides
Author :
Chen, L.J. ; Wu, W.W. ; Chen, S.Y. ; Chen, H.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
Metal silicide thin films are integral parts of all microelectronics devices. They have been used as ohmic contact, Schottky barrier contact, gate electrode, local interconnect and diffusion barrier. Silicides of nanoscale are named nanosilicides. As the IC industry moves into the nano era, metal silicide contacts are naturally falling into this category. In this paper, we present an overview of the recent progresses on the study of nanoscale silicides
Keywords :
Schottky barriers; diffusion barriers; integrated circuit interconnections; nanotechnology; ohmic contacts; thin films; IC industry; Schottky barrier contact; diffusion barrier; gate electrode; local interconnect; metal silicide contacts; microelectronics devices; nanoscale metal silicide thin films; ohmic contact; Annealing; Electrodes; Metals industry; Microelectronics; Ohmic contacts; Quantum dots; Schottky barriers; Self-assembly; Silicides; Thin film devices;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220878
