DocumentCode
2387980
Title
Nanoscale Metal Silicides
Author
Chen, L.J. ; Wu, W.W. ; Chen, S.Y. ; Chen, H.C.
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
fYear
0
fDate
0-0 0
Firstpage
134
Lastpage
138
Abstract
Metal silicide thin films are integral parts of all microelectronics devices. They have been used as ohmic contact, Schottky barrier contact, gate electrode, local interconnect and diffusion barrier. Silicides of nanoscale are named nanosilicides. As the IC industry moves into the nano era, metal silicide contacts are naturally falling into this category. In this paper, we present an overview of the recent progresses on the study of nanoscale silicides
Keywords
Schottky barriers; diffusion barriers; integrated circuit interconnections; nanotechnology; ohmic contacts; thin films; IC industry; Schottky barrier contact; diffusion barrier; gate electrode; local interconnect; metal silicide contacts; microelectronics devices; nanoscale metal silicide thin films; ohmic contact; Annealing; Electrodes; Metals industry; Microelectronics; Ohmic contacts; Quantum dots; Schottky barriers; Self-assembly; Silicides; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220878
Filename
1669465
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