Title :
High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference
Author :
Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Chen, W.J. ; Wang, X.P. ; Li, M.-F. ; Zhu, C. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
The authors report novel 1000degC-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phim-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured
Keywords :
CMOS integrated circuits; VLSI; hafnium compounds; iridium compounds; lanthanum compounds; rapid thermal annealing; tantalum compounds; work function; -0.10 V; 0.18 V; 1.6 nm; 1000 C; 4.24 eV; 5.08 eV; 85 C; CMOS; VLSI; [Ir3Si-TaN]-HfLaON; rapid thermal annealing; work-function difference; Amorphous materials; CMOS technology; Computer aided manufacturing; Crystallization; Dielectrics; Hafnium compounds; Leakage current; Temperature; Thermal stability; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346859
