Title :
Integration and Performance of Schottky Junction SOI Devices
Author :
Dubois, Emmanuel ; Larrieu, Guilhem
Author_Institution :
Institut d´´Electronique, de Microelectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS, Villeneuve d´´Ascq
Abstract :
This paper demonstrates the successful integration of Schottky-barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB-MOSFETs are shown to steadily progress with respect to conventional highly-doped S/D with a current drive (Ion) of 325-425 muA/mum, an off-state current (Ioff) of 14-368 muA/mum at -2 V for 100-40 nm physical gate lengths, respectively
Keywords :
MOSFET; Schottky barriers; silicon-on-insulator; Schottky junction SOI devices; Schottky-barrier MOSFET; off-state current; physical gate lengths; platinum silicide source-drain architecture; tungsten midgap gate; High K dielectric materials; High-K gate dielectrics; MOSFETs; Ohmic contacts; Platinum; Schottky barriers; Silicides; Thermionic emission; Threshold voltage; Tungsten;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220882
