Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

We report thin SGOI (silicon germanium on insulator) with 65% Ge concentration p-MOSFET (metal-oxide-semiconductor-field-effect-transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO₂/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET