A Study of Nickel Silicide Formed on SOI Substrate with Different Ni/Co Thicknesses for Nano-scale CMOSFET

In this paper, a study of Ni suicide formed on SOI substrate that has different Si thickness (T_si = 27, 50 nm) is performed in depth. The dependence of Ni silicide on the thickness of Ni/Co is also characterized. Ni silicide on SOI film exhibits quite different characteristics compared to that on bulk silicon. That is, Ni silicide on SOI showed ´V´ shape as a function of deposited Ni/Co thickness while Ni silicide on bulk-Si showed linear dependence. Moreover, sheet resistance showed strong dependence on the SOI film thickness. Conclusively, Ni thickness adjustment is very important as the SOI Si-film thickness becomes thinner for nano-scale CMOS technology