Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV. The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low V_th value and high mobility suitable for high performance devices are achieved at a practical EOT of 8Aring