Title :
Formation and Thermal Stability Characteristics of Ni Silicide on Boron Cluster (B18H22) Implanted Source/Drain
Author :
Lee, W.J. ; Oh, S.Y. ; Kim, Y.J. ; Zhang, Y.Y. ; Zhong, Z. ; Jung, S.Y. ; Ji, H.H. ; Hwang, K.J. ; Kim, Y.C. ; Cho, H.T. ; Knull, W.A. ; Wang, J.S. ; Lee, H.D.
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
The formation and thermal stability characteristics of Ni silicide formed on boron cluster (B18H22) implanted substrate were examined in comparison with those formed on conventional boron and BF2 implanted substrates. The Ni suicide formed on boron cluster implanted substrate showed similar characteristics as those formed on boron and BF2 implanted source/drain. Its sheet resistance, however, increased compared with boron and BF2 cases after high temperature post-silicidation annealing
Keywords :
annealing; boron compounds; electric resistance; ion implantation; nickel compounds; thermal stability; NiSi; boron cluster implanted source-drain; high temperature post-silicidation annealing; implanted substrate; sheet resistance; silicide; thermal stability; Boron; Contact resistance; Ion implantation; MOSFET circuits; Rapid thermal processing; Research and development; Silicides; Substrates; Temperature; Thermal stability;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220888
