Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2

Author

Tsutsui, K. ; Xiang, Ruifei ; Nagahiro, Koji ; Shiozawa, Takashi ; Ahmet, Parhat ; Okuno, Yasutoshi ; Matsumoto, Michikazu ; Kubota, Masafumi ; Kakushima, Kuniyuki ; Iwai, Hiroshi

Author_Institution

Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Yokohama

fYear

0

fDate

0-0 0

Firstpage

188

Lastpage

191

Abstract

NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni suicide is originated from phase transition from NiSi to NiSi₂ and/or agglomeration of the suicide layers. We noticed the phenomenon that the sheet resistance increased irregularly at the temperature region for the phase transition, that is, the peak characteristics appeared in the transformation curve of sheet resistance. In this work, condition of generating the high resistance state was revealed by changing temperature, ramping rate and duration time in the silicidation process

Keywords

electric resistance; nickel compounds; solid-state phase transformations; thermal stability; NiSi; NiSi₂; agglomeration; phase transition; ramping rate; salicide process; sheet resistance; silicidation process; silicides; thermal stability; transformation curve; Annealing; Atomic force microscopy; CMOS technology; Chemicals; Semiconductor films; Sheet materials; Silicides; Temperature dependence; Temperature distribution; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220889

Filename

1669476