Title :
Influence of the Annealing Ambient on the Thermal Stability of Ni Silicide for nano-scale CMOSFETs
Author :
Oh, Soon-Young ; Lee, Hi-Deok ; Wang, Jin-Suk
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
The thermal stability of Ni silicide was evaluated using post-silicidation annealing ambient such O2, N2, and 30 mTorr vacuum. Among the conditions, the thermal stability of NiSi was improved in 30 mTorr vacuum condition due to the maintenance of stable phases after post-silicidation annealing without combining oxygen. Moreover, abnormal oxidation on the As-doped Si was also suppressed in vacuum condition
Keywords :
annealing; nickel compounds; oxidation; semiconductor-insulator boundaries; surface roughness; thermal stability; 30 mtorr; NiSi; Si:As; abnormal oxidation; annealing; nanoscale CMOSFET; oxygen; post-silicidation annealing; silicide; thermal stability; vacuum condition; Annealing; Atomic force microscopy; CMOSFETs; MOSFET circuits; Nickel; Oxidation; Plasma temperature; Silicides; Thermal resistance; Thermal stability;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220891
