• DocumentCode
    2388265
  • Title

    High performance Ge pMOS devices using a Si-compatible process flow

  • Author

    Zimmerman, P. ; Nicholas, G. ; Jaeger, B. De ; Kaczer, B. ; Stesmans, A. ; Ragnarsson, L. Å ; Brunco, D.P. ; Leys, F.E. ; Caymax, M. ; Winderickx, G. ; Opsomer, K. ; Meuris, M. ; Heyns, M.M.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Ge pMOS mobilities up to 358 cm2/Vs are demonstrated using a Si-compatible process flow without the incorporation of strain. EOT is approximately 12 Aring with a gate leakage less than 0.01 A/cm 2 at Vt+ 0.6 V. Ge transistors are characterized with gate lengths ranging from 10 mum down to 0.125 mum, the shortest ever reported. We also present the best Ge pMOS drain current to date of 790 muA/mum at Vgt = Vd = -1.5V for an Lg of 0.19 mum
  • Keywords
    MOSFET; elemental semiconductors; germanium; silicon; -1.5 V; 0.125 to 10 micron; Ge; Ge pMOS devices; Ge pMOS drain current; Ge transistors; Si; Si-compatible process flow; gate leakage; Annealing; Capacitive sensors; Dielectric substrates; Dry etching; Gate leakage; Hafnium oxide; Implants; MOS devices; Passivation; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346870
  • Filename
    4154289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388265