Author :
Zimmerman, P. ; Nicholas, G. ; Jaeger, B. De ; Kaczer, B. ; Stesmans, A. ; Ragnarsson, L. Å ; Brunco, D.P. ; Leys, F.E. ; Caymax, M. ; Winderickx, G. ; Opsomer, K. ; Meuris, M. ; Heyns, M.M.
Abstract :
Ge pMOS mobilities up to 358 cm2/Vs are demonstrated using a Si-compatible process flow without the incorporation of strain. EOT is approximately 12 Aring with a gate leakage less than 0.01 A/cm 2 at Vt+ 0.6 V. Ge transistors are characterized with gate lengths ranging from 10 mum down to 0.125 mum, the shortest ever reported. We also present the best Ge pMOS drain current to date of 790 muA/mum at Vgt = Vd = -1.5V for an Lg of 0.19 mum
Keywords :
MOSFET; elemental semiconductors; germanium; silicon; -1.5 V; 0.125 to 10 micron; Ge; Ge pMOS devices; Ge pMOS drain current; Ge transistors; Si; Si-compatible process flow; gate leakage; Annealing; Capacitive sensors; Dielectric substrates; Dry etching; Gate leakage; Hafnium oxide; Implants; MOS devices; Passivation; Tin;
