Title :
Investigation of Relaxed SiGe on Insulator and Strained Si
Author :
Liu, Weili ; Lin, Chenglu ; Di, Zengfeng ; Song, Zhitang ; Chu, Paul K.
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
Abstract :
Strained silicon on insulator combines the advantages of strained silicon and SOI and becomes one of important materials in future circuit. In this paper, strained silicon was grown on fully relaxed SGOI substrate fabricated by Ge condensation technology. Raman and TEM results indicate that good quality strained silicon with the epsiv about 1.8% has formed on the relaxed SGOI substrate
Keywords :
Ge-Si alloys; Raman spectra; condensation; semiconductor materials; semiconductor technology; silicon-on-insulator; transmission electron microscopy; Ge condensation technology; Raman spectra; Si-Ge; TEM; relaxed SGOI substrate; strained silicon on insulator; Atomic layer deposition; Capacitive sensors; Germanium silicon alloys; Image resolution; Insulation; Materials science and technology; Oxidation; Silicon germanium; Silicon on insulator technology; Substrates;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220894
