DocumentCode
2388278
Title
Investigation of Relaxed SiGe on Insulator and Strained Si
Author
Liu, Weili ; Lin, Chenglu ; Di, Zengfeng ; Song, Zhitang ; Chu, Paul K.
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
fYear
0
fDate
0-0 0
Firstpage
210
Lastpage
213
Abstract
Strained silicon on insulator combines the advantages of strained silicon and SOI and becomes one of important materials in future circuit. In this paper, strained silicon was grown on fully relaxed SGOI substrate fabricated by Ge condensation technology. Raman and TEM results indicate that good quality strained silicon with the epsiv about 1.8% has formed on the relaxed SGOI substrate
Keywords
Ge-Si alloys; Raman spectra; condensation; semiconductor materials; semiconductor technology; silicon-on-insulator; transmission electron microscopy; Ge condensation technology; Raman spectra; Si-Ge; TEM; relaxed SGOI substrate; strained silicon on insulator; Atomic layer deposition; Capacitive sensors; Germanium silicon alloys; Image resolution; Insulation; Materials science and technology; Oxidation; Silicon germanium; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220894
Filename
1669481
Link To Document