Title :
Thermal Stability and Electrical Properties of High-k Gate Dielectric Materials
Author :
Huang, A.R. ; Chu, Paul K.
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong
Abstract :
The use of SiO2 thin films as the gate dielectric is quickly reaching a limitation due to the rapid increase in tunneling current and worsened device reliability. A logical alternative is to use a gate insulator with a higher relative dielectric constant (high-k) than silicon dioxide (3.9), thereby spurring tremendous research activities to produce better high-k gate dielectric materials. In this paper, the recent progress made in our laboratory on the high-k materials is described. The various means to improve the thermal stability of high-k materials like Ta2O5, ZrO2, and HfO2 deposited on Si and their electrical properties will be discussed. The characteristics of Al2 O3 gate dielectrics on fully-depleted SiGe-on-insulator (SGOI) will also be described
Keywords :
alumina; hafnium compounds; high-k dielectric thin films; tantalum compounds; thermal stability; zirconium compounds; Al2O3; HfO2; SiO2 thin films; Ta2O5; ZrO2; device reliability; dielectric constant; electrical properties; gate dielectric; high-k gate dielectric materials; thermal stability; tunneling current; Dielectric devices; Dielectric thin films; Dielectrics and electrical insulation; High K dielectric materials; High-K gate dielectrics; Laboratories; Silicon compounds; Thermal stability; Thin film devices; Tunneling;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220895
