Title :
High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs
Author :
Saraswat, Krishna C. ; Chui, Chi On ; Kim, Donghyun ; Krishnamohan, Tejas ; Pethe, Abhijit
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; germanium; nanotechnology; silicon; GaAs; Ge; III-V materials; InAs; InSb; Si; channel materials; high mobility materials; nanoscale MOSFET; Capacitive sensors; Charge carrier processes; Conducting materials; Dielectric materials; Gallium arsenide; III-V semiconductor materials; MOSFETs; Nanoscale devices; Quantization; Silicon;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346871
