Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

Author

Cros, Antoine ; Romanjek, Krunoslav ; Fleury, Dominique ; Harrison, Samuel ; Cerutti, Robin ; Coronel, Philippe ; Dumont, Benjamin ; Pouydebasque, Arnaud ; Wacquez, Romain ; Duriez, Blandine ; Gwoziecki, Romain ; Boeuf, Frederic ; Brut, Hugues ; Ghibaudo,

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced

Keywords

CMOS integrated circuits; carrier mobility; interface states; ion implantation; semiconductor doping; CMOS scaling; Coulomb scattering; annealing temperature; interface states; mobility degradation; nonCoulombian defects; oxide charges; pocket dopants; pocket implants; short channel MOSFET; Degradation; Doping; Electron mobility; Implants; MOSFETs; Magnetic field measurement; Performance evaluation; Scattering; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346872

Filename

4154291