Title :
Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel
Author :
Kawakami, Nobuyuki ; Egusa, Kazuhiko ; Shibahara, Kentaro
Author_Institution :
Electron. Res. Lab., Kobe Steel Ltd., Hyogo, Japan
Abstract :
P-type MOSFETs were fabricated using Sb and As for super steep retrograde well channel formation. The steeper channel profile obtained by the Sb channel increased drain current with the almost same threshold voltage and its roll-off characteristics. In addition, V/sub th/ fluctuation was reduced by the Sb channel.
Keywords :
MOSFET; antimony; arsenic; doping profiles; Si:Sb,As; antimony super steep retrograde well channel; dopant profile; drain current; p-MOSFET; roll-off characteristics; threshold voltage fluctuation; Degradation; Doping; Fabrication; Fluctuations; Impurities; Ion implantation; MOSFET circuits; Scattering; Steel; Threshold voltage;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993814
