Novel Approach to MOS Inversion Layer Mobility Characterization with Advanced Split C-V and Hall Factor Analyses

Parasitic effects and Matthiessen´s rule have been reinvestigated in the inversion layer mobility analysis. It is shown that an advanced split C-V technique newly developed is very useful for characterizing the intrinsic inversion layer mobility in short channel MOSFETs, even with very large parasitic effects. Furthermore, the validity of Matthiessen´s rule is experimentally and theoretically investigated through Hall factor analysis