Bias Dependence of Partially-Depleted SOI Transistor to Total Dose Irradiation

Through experimental results and analysis by MEDICI simulations, different irradiation response for partially depleted (PD) silicon-on-insulator (SOI) transistors was investigated. The worst-case bias for PD SOI NMOSFETs during total dose irradiation were obtained by irradiated the transistors under different bias. The results of simulation with MEDICI showed that the response of the transistors to total dose radiation strongly depended on the electrical field in the buried oxide layer of the SOI transistors, and the worst electric field bias case for SOI NMOSFETs with total dose radiation was suggested. Good agreement between experimental results and simulation is demonstrated