• DocumentCode
    2388401
  • Title

    Self-Assembled Si-Ge Nanorings with Size and Composition-Control

  • Author

    He, J.H. ; Hsin, C.L. ; Wang, C.W. ; Chen, L.J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    236
  • Lastpage
    239
  • Abstract
    Self-assembled single-crystal nanorings (NRs), as small as 10 nm, on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings
  • Keywords
    Ge-Si alloys; elemental semiconductors; germanium; nanostructured materials; nanotechnology; self-assembly; semiconductor doping; Au nanodots; SiGe:Ge; eutectic liquid droplets; nanofabrication technique; self-assembled single-crystal nanorings; Atomic force microscopy; Gold; Mediation; Nanoscale devices; Scanning electron microscopy; Self-assembly; Semiconductor thin films; Sputtering; Temperature; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220900
  • Filename
    1669487