Future of Strained Si/Semiconductors in Nanoscale MOSFETs

Author

Thompson, S.E. ; Suthram, S. ; Sun, Y. ; Sun, G. ; Parthasarathy, S. ; Chu, M. ; Nishida, T.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The maximum electron and hole mobility enhancement for uniaxial process-induced strained silicon is modeled and experimentally measured using a flexure based 4-point wafer bending jig. The highest known uniaxial stress to date is introduced into the channel of MOSFETs (applied mechanical stress of ~1.0GPa on samples with initial process stress of 1GPa for a total channel stress of ~2Pa). The maximum mobility enhancement from uniaxial stress is found to be greater than ~4.0 and ~1.7 times for holes and electrons, respectively. The physics behind the strain enhanced mobility is explained and future cases of technological importance to the industry are investigated

Keywords

MOSFET; electron mobility; elemental semiconductors; hole mobility; nanotechnology; silicon; stress effects; Si; electron mobility enhancement; flexure based 4-point wafer bending jig; hole mobility enhancement; mechanical stress; nanoscale MOSFET; strain enhanced mobility; uniaxial process-induced strained silicon; uniaxial stress; Capacitive sensors; Charge carrier processes; Electron mobility; Lattices; MOSFETs; Semiconductor device modeling; Silicon; Strain measurement; Stress; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346877

Filename

4154296