Plasma immersion ion implantation as an alternative doping technology for ULSI

Author

Lee, Kilho

Author_Institution

Infineon Technol., IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

29-30 Nov. 2001

Firstpage

21

Lastpage

27

Abstract

Plasma immersion ion implantation (PIII) has much attracted attention as a promising and innovatory doping technology for silicon (Si) processing of ultra-large-scale-integrated circuits (ULSI). In this article, we review and demonstrate the most attractive application areas of PIII for the development of advanced devices. PIII not only shows its unique characteristics for each application area, but also improves device performances very remarkably.

Keywords

ULSI; elemental semiconductors; integrated circuit technology; integrated circuit testing; ion implantation; plasma materials processing; semiconductor doping; silicon; Si; ULSI; device performances; doping technology; plasma immersion ion implantation; ultra-large-scale-integrated circuits; Capacitors; Electrodes; Integrated circuit technology; Ion implantation; Plasma immersion ion implantation; Random access memory; Semiconductor device doping; Silicon; Substrates; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-019-4

Type

conf

DOI

10.1109/IWJT.2001.993819

Filename

993819