• DocumentCode
    2388502
  • Title

    State of the art in high-resolution SIMS depth profiling

  • Author

    Wittmaack, K.

  • Author_Institution
    Inst. of Radiat. Protection, GSF - Nat. Res. Centre for Environ. & Health, Neuherberg, Germany
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    39
  • Lastpage
    44
  • Abstract
    Recent progress in the field of sputter depth profiling in combination with secondary ion mass spectrometry (SIMS) is reviewed briefly. Emphasis is placed on aspects of depth resolution and dosimetry.
  • Keywords
    secondary ion mass spectroscopy; depth resolution; dosimetry; secondary ion mass spectrometry; sputter depth profiling; Boron; Chemical elements; Doping; Dosimetry; Electronic mail; Ion beams; Mass spectroscopy; Molecular beam epitaxial growth; Protection; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993822
  • Filename
    993822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388502