Title :
State of the art in high-resolution SIMS depth profiling
Author_Institution :
Inst. of Radiat. Protection, GSF - Nat. Res. Centre for Environ. & Health, Neuherberg, Germany
Abstract :
Recent progress in the field of sputter depth profiling in combination with secondary ion mass spectrometry (SIMS) is reviewed briefly. Emphasis is placed on aspects of depth resolution and dosimetry.
Keywords :
secondary ion mass spectroscopy; depth resolution; dosimetry; secondary ion mass spectrometry; sputter depth profiling; Boron; Chemical elements; Doping; Dosimetry; Electronic mail; Ion beams; Mass spectroscopy; Molecular beam epitaxial growth; Protection; Tail;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993822
