Title :
Surface concentration of primary ion species and its effect to depth profiling in SIMS analyses
Author :
Yoshikawa, S. ; Tsukamoto, K.
Author_Institution :
Matsushita Technoresearch, Inc, Osaka, Japan
Abstract :
In Secondary Ion Mass Spectrometry (SIMS), the presence of primary ions on the sputtering surface is considered to enhance the secondary ion yields. In this work, the surface concentration profiles of Cs primary ions were investigated in details for Si using low energy oxygen primary ion bombardment in order to achieve accurate depth profiling with Cs primary ions.
Keywords :
elemental semiconductors; secondary ion mass spectra; silicon; sputtering; Cs; Cs primary ion species; O/sub 2/; Si; Si surface; depth profiling; low energy oxygen primary ion bombardment; secondary ion mass spectrometry; secondary ion yield; sputtering; surface concentration profile; Abstracts; Electronic mail; Hafnium; Ion beams; Mass spectroscopy; Semiconductor devices; Semiconductor impurities; Sputtering; Steady-state; Transient analysis;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993823
