Title :
Scanning microscopy of higher harmonic capacitance response for Si device
Author :
Naitou, Yuichi ; Ookubo, Norio
Author_Institution :
Functional Mater. Res. Labs., NEC Corp., Miyazaki, Japan
Abstract :
We have devised a novel mode for delineating p-n junction in 2 dimensions using a scanning capacitance microscopy (SCM). We modulate by an ac voltage V the capacitance C of a tiny metal-oxide-semiconductor (MOS) junction comprised by a sharp metal probe tip, a thin SiO/sub 2/ layer and a sample semiconductor, and then detect 2nd harmonic response of C, namely, d/sup 2/C/dV/sup 2/. The 2nd harmonic response shows its characteristic peak at the p-n junction because of the built-in depletion layer.
Keywords :
MIS devices; capacitance measurement; elemental semiconductors; p-n junctions; scanning probe microscopy; silicon; MOS junction; Si; Si device; built-in depletion layer; p-n junction; scanning capacitance microscopy; second harmonic response; two-dimensional imaging; Capacitance; Capacitive sensors; Frequency; Laboratories; Microscopy; P-n junctions; Probes; Signal detection; Signal generators; Voltage;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993824
