DocumentCode
2388546
Title
In-line metrology for junction measurement and yield control
Author
Al-Bayati, Amir ; Lazik, Christopher ; Paton, Eric ; Kluth, Jon ; Borden, Peter
Author_Institution
Appl. Mater., Menlo Park, CA, USA
fYear
2001
fDate
29-30 Nov. 2001
Firstpage
53
Lastpage
56
Abstract
Modeling and device results demonstrate the high sensitivity of advanced transistors to small variation in junction depth. Non-destructive measurements with the Carrier Illumination/sup TM/ method correlate to NMOS drive current, RTA process variation, and small implant energy changes, demonstrating feasibility of in-line control for annealed implants.
Keywords
MOSFET; ion implantation; process control; rapid thermal annealing; semiconductor device measurement; Carrier Illumination; NMOS transistor; RTA process; drive current; in-line control; in-line metrology; ion implantation; junction depth; junction measurement; nondestructive measurement; yield control; Annealing; Electrical resistance measurement; Energy measurement; Implants; Interference; MOS devices; Metrology; Probes; Size measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-019-4
Type
conf
DOI
10.1109/IWJT.2001.993825
Filename
993825
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