Effect of Rapid Thermal Annealing on Ti/Al/Ni/Au Ohmic Contact to n-Al0.45Ga0.55N

Author

Chen, Jun ; Li, Xue ; Li, Xiangyang

Author_Institution

State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai

fYear

0

fDate

0-0 0

Firstpage

262

Lastpage

264

Abstract

The rapid thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-Al_0.45Ga_0.55N are investigated by current-voltage (I-V) measurements and transmission line model (TLM). Experiment results indicated that with high Al fraction, it is easy to form ohmic contact to n-AlGaN. Our experiments show that the specific contact resistance (rho_c) depends on annealing temperature and time. The minimum of rho_c is obtained as 2.75 times 10^-4 Omegacm² at 550degC for 1 minute. Scanning electron microscopy (SEM) study showed that the surface morphology of the contact metal annealed at 550degC for 1 minute became somewhat degraded compared with that of other conditions

Keywords

III-V semiconductors; aluminium; aluminium compounds; contact resistance; gallium compounds; gold; nickel; ohmic contacts; rapid thermal annealing; scanning electron microscopy; semiconductor-metal boundaries; surface morphology; titanium; wide band gap semiconductors; 1 min; 550 degC; SEM; Ti-Al-Ni-Au-Al_0.45Ga_0.55N; contact resistance; current-voltage measurements; n-Al_0.45Ga_0.55N; ohmic contact; rapid thermal annealing; scanning electron microscopy; surface morphology; transmission line model; Contact resistance; Current measurement; Electrical resistance measurement; Gold; Ohmic contacts; Rapid thermal annealing; Scanning electron microscopy; Surface morphology; Temperature dependence; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220906

Filename

1669493