• DocumentCode
    2388572
  • Title

    USJ technology solutions by stretching the limits of a lamp-based RTP system

  • Author

    Boas, Ryan ; Balasubramanian, Ramachandran ; Pham, Gia ; Ramamurthy, Senthil

  • Author_Institution
    Transistor Capacitor Group, Appl. Mater. Inc., Santa Clara, CA, USA
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    Traditionally lamp-based RTP systems have been part of the limitations in meeting all the requirements for sub-100 nm device geometries. In this paper we present some data that shows the possibility of extending the capabilities of a production-proven technology to meet advanced performance targets through hardware, process and controller optimization.
  • Keywords
    rapid thermal processing; semiconductor junctions; 100 nm; lamp-based RTP system; ultra-shallow junction technology; Annealing; Boron; Capacitors; Electrical resistance measurement; Geometry; Hardware; Implants; Optimized production technology; Process control; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993827
  • Filename
    993827