Title :
A CAD Oriented 4H-SiC MESFET Quasi-analytical Large-signal Drain Current Model
Author :
Quanjun, Cao ; Yimen, Zhang ; Yuming, Zhang ; Yuancheng, Chang
Author_Institution :
Microelectron. Inst., Xidian Univ., Xi´´an
Abstract :
A 4H-SiC MESFET (metal semiconductor field effect transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE (power added efficiency), output power, and gain
Keywords :
CAD; Schottky gate field effect transistors; semiconductor device models; silicon compounds; 4H-SiC MESFET; CAD tools; DC I-V characteristics; SiC; gain; metal semiconductor field effect transistor; output power; power added efficiency; quasianalytical large-signal drain current model; Electron mobility; Equivalent circuits; FETs; Intrusion detection; MESFET circuits; Microelectronics; Predictive models; Radio frequency; Thermal conductivity; Threshold voltage;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220908
