DocumentCode
2388646
Title
Improvement of dosimetry monitoring by Therma-Wave signal in indium implantation
Author
Sano, Makoto ; Harada, Mitsuaki ; Kabasawa, Mitsuaki ; Sato, Fumiaki ; Sugitani, Michiro
Author_Institution
Product Eng., Sumitomo Eaton Nova Corp., Ehime, Japan
fYear
2001
fDate
29-30 Nov. 2001
Firstpage
75
Lastpage
76
Abstract
Dosimetry of ion implantation is monitored mainly by sheet resistivity measurement or Therma-Wave measurement (TW). Due to low solubility of indium (In) in silicon, TW is adopted generally as dosimetry monitor. Repeatability of TW for In implantation was researched in order to improve monitoring accuracy. It was found that TW signal was influenced by conditions of implantation, wafer, and measurement.
Keywords
dosimetry; elemental semiconductors; indium; ion implantation; photothermal effects; process monitoring; silicon; Si:In; Therma-Wave signal; dosimetry monitoring; indium ion implantation; silicon wafer; Abstracts; Annealing; Conductivity measurement; Dosimetry; Indium; Ion implantation; Monitoring; Reflectivity; Silicon; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-019-4
Type
conf
DOI
10.1109/IWJT.2001.993831
Filename
993831
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