Title :
The Characteristics of Functional Phototransistors
Author :
Tan, S.W. ; Liu, K.P. ; Liao, C.W. ; Huang, Y.S. ; Chen, W.C. ; Chen, H.H.
Author_Institution :
Dept. of Electr. Eng., Ching Yun Univ., Taiwan
Abstract :
Experiments and modeling of functional heterojunction phototransistors (FPTs) are reported for comparing to HPTs without base electrode and conventional HPTs with a base electrode using the same epi-layers. Functional phototransistors having double emitters with different area ratio (A1:A2) but a fixed total area together with collector form a three-terminal device. As a voltage-bias emitter instead of a current-bias base is used, all kinds of FPTs exhibit an enhanced collector photocurrent as compared with a HPT with the same total emitter area. Experimental results reveal that 2:1 and 1:1 FPTs exhibit 1.85- and 1.5-fold optical gain of that from a HPT, respectively. Moreover, a new circuit model with three sets of parallel diodes was proposed to demonstrate the performance enhancement and polarity-dependent behaviors. Theoretical results are in very good agreement with experimental ones and indicate that more than 3-fold enhancement is expected
Keywords :
III-V semiconductors; photoconductivity; phototransistors; semiconductor device models; 3-fold enhancement; base electrode; circuit model; collector photocurrent; epilayers; functional heterojunction phototransistors; optical gain; parallel diodes; polarity-dependent behaviors; three-terminal device; Circuits; Electrodes; Fabrication; Heterojunctions; Optical noise; Optical receivers; Photoconductivity; Phototransistors; Stimulated emission; Voltage;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220912