Title :
RBS characterization on the PtSi-based ohmic contacts with n-InP
Author :
Huang, Wen-Chang
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan
Abstract :
PtSi based ohmic contact on InP substrate was discussed in the research. The inter-diffusion between the elements of the contacts after various annealing temperature were analyzed by Rutherford backscattering analysis (RBS). A better specific contact resistance was obtained at the Au/Si/Pt/InP contact scheme. The ohmicity was due to the silicon doping effect to InP substrate. The existence of Au on the contact could improve the doping effect
Keywords :
III-V semiconductors; Rutherford backscattering; annealing; chemical interdiffusion; contact resistance; gold; indium compounds; ohmic contacts; platinum; platinum alloys; semiconductor doping; semiconductor-metal boundaries; silicon; silicon alloys; Au-Si-Pt-InP; PtSi-InP; RBS; Rutherford backscattering analysis; annealing temperature; contact resistance; doping effect; interdiffusion; ohmic contacts; ohmicity; Annealing; Contact resistance; Etching; Gold; Indium phosphide; Kelvin; Ohmic contacts; Semiconductor device doping; Substrates; Temperature;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220916
