• DocumentCode
    2388801
  • Title

    Ultra-shallow junction formed using laser annealing for sub-50 nm MOS devices

  • Author

    Oh, Hyuckjae ; Choi, Hoon ; Bea, Jichel ; Hirosue, Takasi ; Sim, Jeoungchill ; Kurino, Hiroyuki ; Koyanagi, Mitumasa

  • Author_Institution
    Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    Requirements for the shallow junction technology in the sub-50 nm regime have been discussed. We propose a new ultra-shallow junction formation method called as Laser Induced Atomic Layer Doping (LI-ALD). The ultra-shallow junction with the depth of less than 20 nm could be formed using LI-ALD. The NMOS transistors with the ultra shallow junction formed by LI-ALD were demonstrated in this paper.
  • Keywords
    MOSFET; laser beam annealing; semiconductor doping; semiconductor junctions; 50 nm; MOS device; NMOS transistor; laser annealing; laser induced atomic layer doping; ultra-shallow junction technology; Annealing; Atom lasers; Atomic beams; Atomic layer deposition; Doping; MOS devices; MOSFETs; Optical films; Pulsed laser deposition; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993836
  • Filename
    993836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388801