Title :
Ultra-shallow junction formed using laser annealing for sub-50 nm MOS devices
Author :
Oh, Hyuckjae ; Choi, Hoon ; Bea, Jichel ; Hirosue, Takasi ; Sim, Jeoungchill ; Kurino, Hiroyuki ; Koyanagi, Mitumasa
Author_Institution :
Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan
Abstract :
Requirements for the shallow junction technology in the sub-50 nm regime have been discussed. We propose a new ultra-shallow junction formation method called as Laser Induced Atomic Layer Doping (LI-ALD). The ultra-shallow junction with the depth of less than 20 nm could be formed using LI-ALD. The NMOS transistors with the ultra shallow junction formed by LI-ALD were demonstrated in this paper.
Keywords :
MOSFET; laser beam annealing; semiconductor doping; semiconductor junctions; 50 nm; MOS device; NMOS transistor; laser annealing; laser induced atomic layer doping; ultra-shallow junction technology; Annealing; Atom lasers; Atomic beams; Atomic layer deposition; Doping; MOS devices; MOSFETs; Optical films; Pulsed laser deposition; Silicon;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993836
