Title :
Ultra shallow junctions formed by different pulse duration excimer lasers
Author :
Kagawa, K. ; Niwatsukino, Y. ; Matsuno, A. ; Nire, T.
Author_Institution :
Res. Div., Komatsu Ltd., Kanagawa, Japan
Abstract :
Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. Junction depth of 20 nm with sheet resistance of about 400 ohm/sq. was obtained at 700 mJ/cm/sup 2/ of the laser energy density and 33 ns of the laser pulse duration. Furthermore, we found that sheet resistance, junction depth and crystal defects in the junctions were affected by laser pulse duration.
Keywords :
boron; ion implantation; laser beam annealing; semiconductor junctions; KrF; KrF excimer laser annealing; Si:B; boron implantation; crystal defect; junction depth; laser energy density; laser pulse duration; sheet resistance; ultra-shallow junction; Annealing; Boron; Germanium; Laser theory; Optical pulses; Solids; Space vector pulse width modulation; Substrates; Surface resistance; Transmission electron microscopy;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993837
