DocumentCode
2388828
Title
Coherent phonon excitation as nonequilibrium dopant activation process for ultra-shallow junction formation
Author
Setsuhara, Y. ; Mizuno, B. ; Takase, M. ; Hashida, M. ; Fuita, M. ; Adachi, S.
Author_Institution
Graduate Sch. of Eng., Kyoto Univ., Japan
fYear
2001
fDate
29-30 Nov. 2001
Firstpage
103
Lastpage
106
Abstract
A novel non-thermal dopant activation process is proposed based on coherent excitation of phonons in the frequency range of 10-100 GHz and 1-10 THz. Major objective of the proposed method is to achieve non-thermal annealing of the implanted dopants by directly and coherently inducing lattice vibration (i.e. phonons) to attain large amplitude for effective low-temperature activation of the dopants.
Keywords
annealing; phonon-impurity interactions; semiconductor doping; semiconductor junctions; 1 to 10 THz; 10 to 100 GHz; coherent phonon excitation; lattice vibration; nonequilibrium dopant activation; nonthermal annealing; ultra-shallow junction; Free electron lasers; Frequency; Laser excitation; Laser theory; Lattices; Millimeter wave technology; Phonons; Rapid thermal annealing; Temperature; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-019-4
Type
conf
DOI
10.1109/IWJT.2001.993838
Filename
993838
Link To Document