• DocumentCode
    2388841
  • Title

    RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs

  • Author

    Kuwabara, K. ; Sato, N. ; Shimamura, T. ; Morimura, H. ; Kodate, J. ; Sakata, T. ; Shigematsu, S. ; Kudou, K. ; Machida, K. ; Nakanishi, M. ; Ishii, H.

  • Author_Institution
    NTT Microsystem Integration Labs., NTT Corp.
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles
  • Keywords
    CMOS integrated circuits; large scale integration; low-power electronics; microswitches; reliability; thin films; 3.3 V; CMOS control circuits; RF CMOS-MEMS switch; low-voltage operation; mechanical reliability; single-chip RF LSI; thin film; CMOS technology; Electrodes; Fabrication; Large scale integration; Radio frequency; Radiofrequency microelectromechanical systems; Springs; Switches; Switching circuits; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346891
  • Filename
    4154310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388841